The high blocking voltage allows power engineers to replace conventional silicon MOSFETs with the new SiC MOSFETs, offering higher efficiency, a simpler driver, and lower heat dissipation, thus reducing overall system costs.
The new SMD package is specifically designed for the high-voltage SiC MOSFETs, occupying a small area and featuring a generous 7mm drain-to-source leakage distance. This is made possible by the small size of the semiconductor and the high blocking capability of Wolfspeed™ SiC MOSFET planar technology. The new package also includes a pin connected to the MOSFET source, which helps reduce gate noise and provides cleaner signals.
"Our new 1700 V SiC MOSFET provides power electronics engineers with significant design advantages in flyback topologies," explains Edgar Ayerbe, Wolfspeed Power MOSFET Marketing Manager. "Due to the low switching losses in silicon carbide, the devices operate at much lower temperatures in the semiconductor. This allows customers to mount the devices directly onto the PCB without requiring additional heat sinks. This reduces manufacturing costs and improves system reliability. The result is a smaller, lighter power supply with a lower system cost than is possible using conventional silicon devices."
The application of the new 1700 V SiC MOSFET is primarily intended for auxiliary power supplies within high-power inverters, such as solar power inverters, motor frequency converters, UPS equipment, wind turbine power converters, and traction systems. These systems typically require converting the bus voltage to a low DC voltage to operate system logic, protection circuits, displays, the grid interface, and cooling fans. These can also be used in three-phase electricity meter power supplies or in any application where the converter requires a high blocking voltage and low capacitance.
The new 17000V SiC MOSFET, designated C2M1000170J, has an avalanche capability above 1800V and an Rdson resistance of 1Ω. These characteristics ensure reliable performance in flyback converter circuits, including those in electrically noisy environments such as high-power inverters. The 1700V SiC MOSFET simplifies flyback topology design with a simple input voltage switch from 200V to 1000V, reducing the complexity of drive control and reducing or eliminating the snubber capacitors required in silicon devices.
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