Toshiba's new high-power SPDT RF switch (TCWA1225G) offers a peak input power of 46 dBm (@ 8 dB PAR). This has been achieved by adopting Toshiba's original CMOS process and optimizing the internal switching circuitry. The CMOS process also reduces insertion loss to avoid diminishing transmit power and receiver sensitivity. As a result, the TCWA1225G's insertion loss is 0.6 dB (typ. @ 5 GHz), approximately 10% lower than that of competing products.
The nominal operating voltage is 3.3 V, and power consumption is only 50 μA. The new device can operate in ambient temperatures ranging from -40°C to +95°C.
The TCWA1225G is housed in a tiny WCSP (Wafer-level Chip Scale Package) measuring just 1.9 mm x 1.9 mm, a footprint 10% smaller than other devices. All important pads, including RF, power, and control terminals, are located on the periphery of the device to simplify the printed circuit board design.
As part of the 5G rollout, telecom base stations have recently incorporated massive MIMO (multiple-input, multiple-output) and multiple TX/RX antennas to deliver ultra-fast speed, ultra-high-capacity radio communication services.
Individual antennas increasingly consist of complex signal transmission paths requiring RF switching. This necessitates low insertion loss and high input power in a compact package to maintain or reduce the antenna size.
- Details
- Category: Integrated Circuits
RF SPDT switch in a compact package
Toshiba Electronics Europe GmbH (“Toshiba”) has just launched a new RF SPDT (Single-Pole, Double Throw) switch in a compact package, suitable for applications such as telecom base stations, industrial equipment, repeaters, consumer equipment and transceivers.
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