The IRL6283M features an Rds(on) of only 500 µOhm (typical) in a 30 mm² DirectFET® Medium Can package to significantly reduce conduction losses. This makes it ideal for active O-ring and electronic fuse (eFuse) applications. The new device can operate on 3.3V, 5V, or 12V power rails and reduces losses by 15% at 20A compared to the best PQFN devices on the market in the same 30 mm² form factor, allowing designers to reduce the number of components in high-current applications.
Like the entire DirectFET® family, the IRL6283M allows for top-side cooling to improve electrical and thermal performance and a seamless lead wire connection for increased reliability. Furthermore, the DirectFET® package meets all RoHS requirements, and its completely lead-free materials list is well-suited for designs with long operating lives. Other high-performance packages on the market incorporate a lead-containing semiconductor die connection, under a RoHS 7(a) exemption that expires in 2016.
IR's StrongIRFET™ family also includes standard PQFN devices in environmentally friendly, lead-free packages with a RoHS-compliant bill of materials.
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- Category: Integrated Circuits
The 20-30V StrongIRFET™ family offers ultra-low Rds(on) for high-performance computing and communications applications
International Rectifier has expanded its StrongIRFET™ family to include 20-30V devices for high-performance computing and communications applications. This family is led by the IRL6283M 20V DirectFET®, characterized by its ultra-low on-resistance (Rds(on)).
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