The device, which measures high currents (10-100A) using a power MOSFET or IGBT, typically requires a large resistor, resulting in excessive power losses (10-30W). Extracting the voltage along the internal Rds(on) of a power MOSFET or the VCE(on) of an IGBT during the switch's on-time allows the IR25750 to eliminate the need for large external current-sensing resistors and heatsinks, thus avoiding these excess power losses.
 
The IR25750's gate drive input provides the VCC supply voltage to the IC and synchronizes the Rds(on) or VCE(on) sensing circuit to the MOSFET or IGBT's turn-on and turn-off times. Leveraging IR's proprietary high-voltage technology, the device also features a 600V blocking capability, necessary to block high VDS or VCE voltages during the turn-off switching time. Other important features include low gate input capacitance, an internal filter delay on conduction (typically 200 ns), and internal 20.8 V blocking zener diodes on the GATE and CS pins.
 
The new current-sensing IC is a novel functional block that uses the Rds(on) of a power MOSFET or the VCE(on) of an IGBT to measure current, thus eliminating the need for external current-sensing resistors. These features enable a significant increase in efficiency and substantial space savings in high-current applications such as switched-mode power electronics, motor control, and industrial equipment.
 
Integrating ESD and excellent blockage immunity on all inputs and outputs for robust monolithic protection, the IR25750 is rated for industrial environments and has a humidity sensitivity level 1 (MSL1) rating.

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