They are suitable for a wide range of demanding power applications, including switched-mode power supplies (SMPS) in servers, data centers, and communications equipment, uninterruptible power supplies (UPS), electric vehicle charging stations, and power conditioners for photovoltaic (PV) inverters.

Compared to lead-based packages such as the TO-247 and TO-247-4L(X), these new devices significantly reduce volume by more than 80%. This significant miniaturization directly contributes to improved power density in equipment. Furthermore, the surface-mount capability of the TOLL package allows the use of smaller parasitic impedance components, including resistors and inductors, which in turn leads to reduced switching losses.

The TOLL package is a 9-pin, 4-terminal package designed to facilitate the use of a Kelvin connection for its signal source terminal for gate drive. This advanced design minimizes the influence of inductance in the source lead within the package, thus achieving high-speed switching performance. For example, the TW048U65C exhibits a remarkable reduction in on-loss (Eon) of approximately 55% and off-loss (Eoff) of around 25% compared to the equivalent Toshiba product using the TO-247 package without a Kelvin connection. This improvement directly contributes to reducing power losses in equipment.

Toshiba's third-generation SiC MOSFETs feature optimized drift resistance and channel resistance ratio, resulting in good temperature dependence of the drain-source resistance (RDS(on)) across a wide range of operating conditions. They also exhibit low RDS(on) x gate-drain loads (Qgd), a crucial figure of merit (FOM), further enhancing their performance. All variants feature an absolute maximum drain-source voltage (VDSS) of 650 V and a wide gate-source voltage (VGSS) range of -10 V to 25 V, enabling compatibility with various gate control circuits and simplifying circuit design. The gate threshold voltage (Vth) of these devices typically ranges from 3.0 V to 5.0 V, further simplifying circuit design. Additionally, the high drain current (ID) ensures robust operation under demanding conditions, enhancing system reliability.