The 2W R24C2T25 can be adjusted using external resistor networks to provide a range of +2.5 to +22.5VDC on one output and -2.5 to 22.5VDC on the second, with an overall sum of voltages of 18 to 25VDC, for example, +15/-3V, to efficiently drive SiC MOSFET gates. Voltages are maintained within +/-1.5%, preventing the risk of overvoltage and damage.
The R24C2T25 has an insulation rating of 3kVAC/1min, an ultra-low coupling capacitance of 3.5pF, and a common-mode transient immunity of +/-150V/ns. This makes these components ideal for powering high-side gate drives with fast voltage and current switching edges.
The rated temperature is up to 82°C ambient at 2W output, with 2.5W available up to 75°C. Reduced power output is also available down to the package maximum of 125°C.
The R24C2T25 is fully equipped with soft start, input overvoltage and undervoltage lockout, thermal shutdown, and output overcurrent protection. Output overvoltage and undervoltage lockout are also provided to ensure that power devices are not subjected to invalid gate voltages. A "power-good" signal is provided along with an ON/OFF control to put the device into standby mode with a current draw of less than 700µA.
“Providing precise gate drive voltages is vital, especially for next-generation wide-gap devices,” says Matthew Dauterive, DC/DC Product Manager at RECOM. “The R24C2T25 can be tuned to optimal voltage levels for the best combination of system efficiency and safety.”.
The R24C2T25 comes with a three-year warranty and is available through all authorized RECOM distributors or by contacting the manufacturer directly. Samples can be requested through the RECOM website.
