The new devices utilize IR's ultra-thin wafer field-stop technology, which reduces conduction and switching losses. Supplied in the same package with a low-Qrr soft recovery diode and featuring a minimum short-circuit time of 10 µs, the devices are optimized for rugged industrial applications.
These new 1200V trench IGBTs offer very low Vce(on) and significantly reduced switching losses, as well as increased system efficiency and transient responsiveness for enhanced reliability, making them well-suited to harsh industrial environments.
The packaged devices cover a wide current range of 10–50 A. Other key advantages include a maximum Tjmax of 150°C, a positive temperature coefficient of Vce(on) to facilitate paralleling, and a lower Vce(on) to reduce power dissipation and achieve higher power density. Unpackaged products are also available.
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- Category: Integrated Circuits
1200V IR IGBTs with higher power density and efficiency in motor drive and UPS applications
International Rectifier has introduced a family of ultra-fast and robust 1200V IGBT (insulated-gate bipolar transistors) transistors, optimized for industrial motor drive systems and UPS.
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