RF switching ICs, manufactured using the new TaRF8 process as the new SP12T process [1] , achieve the lowest insertion loss [2] in their class [3] in the industry. Shipments of SP12T RF switching IC samples manufactured with the new process will begin in January 2016.
Designed for use in smartphones, the SP12T RF switching IC features an integrated MIPI-RFFE controller [4] for mobile applications. The device is suitable for use in devices compliant with the 3GPP GSM, UMTS, W-CDMA, LTE, and LTE-Advanced standards [5].
Products using the new TaRF8 SOI CMOS [6] front-end process achieve the lowest insertion loss in their class in the industry, at 0.32 dB at 2.7 GHz. Compared to products using Toshiba's current TaRF6 process, the insertion loss improves by 0.1 dB while maintaining the same level of distortion characteristics.
With the trend toward high-speed data transfers in mobile communications, high-capacity data transfers, and the integrated RF switching circuits used in mobile devices and smartphones, require multi-port support and improved RF performance. Reducing insertion loss is recognized as a particularly important factor in this, as it decreases RF transmission power loss, which can support longer battery life for mobile devices.
Toshiba is developing high-performance RF switching integrated circuits using in-house manufacturing and applying SOI CMOS technology, which is suitable for integrating both analog and digital circuits. By managing all aspects of the production flow, from RF process technology development to the design and manufacturing of RF switching chips, Toshiba can rapidly improve its SOI CMOS process technology based on feedback from the development of its own RF switching ICs. This Integrated Device Manufacturer (IDM) approach allows Toshiba to quickly establish new process technologies tailored to current products and enter the market with products manufactured using the latest process technology.
Toshiba will continue to improve the performance of its TarfSOI process technology and work to meet customer and market needs in RF switching integrated circuits by introducing next-generation technology products before other manufacturers.
Notes:
[1] Unipolar Twelve Throw Switch
[2] RF switching IC market as of November 20, 2015. Toshiba survey
[3] Power loss that occurs when an RF signal is transmitted through the switch, expressed in decibels (dB).
[4] A serial bus interface specification for controlling RF components for mobile devices, standardized by the Frontend RF (RFFE) working group of the MIPI (Mobile Industry Processor Interface) Alliance.
[5] Mobile communication standards specified by the 3GPP (3rd Generation Partnership Project).
[6] Technology for reducing parasitic capacitance by using an insulation layer under the MOSFET channel. SOI: silicon-on-insulator
* TarfSOI is a trademark of Toshiba Corporation.
