In recent years, due to its energy-saving advantages, SiC is increasingly being used in 1200V applications, such as electric vehicles and industrial equipment. The trend toward higher power density results in higher system voltages and, consequently, greater demand for 1700V products. However, the challenge lies in achieving the required reliability, which is why Si IGBTs remain the preferred choice for 1700V applications.
In response, ROHM has achieved high reliability in 1700V devices while maintaining the low-loss performance of 
its popular 1200V products, and has achieved the first successful commercialization of SiC-based 1700V power modules. The BSM250D17P2E004 utilizes novel construction methods and cladding materials to prevent dielectric breakdown and suppress leakage current rise. As a result, high reliability is achieved, preventing dielectric breakdown even after 1000 hours of high-temperature, high-humidity polarization testing (HV-H3TRB). This ensures a blocking voltage up to 1700V, even in harsh temperature and humidity environments.
By incorporating ROHM's well-known SiC-based MOSFETs and Schottky barrier diodes into the same module and optimizing the internal structure, the conduction resistance is reduced by 10% compared to other SiC products in its class. This translates into greater energy savings in any application.
In the future, we will continue to expand our range to ensure trouble-free use by customers and will work to increase demand by offering evaluation boards that allow for easy testing and verification of our SiC modules.
Key Features
1. Achieves the highest level of reliability in high-temperature and high-humidity environments.
This innovative 1700V module introduces a new encapsulation method and cladding materials to protect the chip, enabling us to achieve the first successful commercialization of a 1700V SiC module, which has passed HV-H3TRB reliability testing.
For example, during high-temperature and high-humidity testing, the BSM250D17P2E004 demonstrated superior reliability with no failures—even with the application of 1360V for more than 1000 hours at 85°C and 85% humidity—unlike conventional IGBT modules, which typically fail in less than 1000 hours due to dielectric breakdown. To ensure the highest level of reliability, ROHM tested the leakage current of the modules at different intervals with the highest blocking voltage level of 1700V.
2. Higher conduction resistance contributes to greater energy savings.
The combination of SiC Schottky barrier diodes (from ROHM) and MOSFETs within the same module allows for a 10% reduction in conduction resistance compared to other products in its class, which contributes to greater energy savings.
Leakage Current
Terminology
: This refers to the small amount of current that escapes from the isolated level of a power device. Suppressing leakage current prevents damage to the device and an increase in energy consumption.
High Voltage Reverse Bias Test with High Humidity and Temperature (HV-H3TRB)
This test evaluates the durability of a power device when used in high temperature and high humidity environments. It is designed to detect failures such as dielectric breakdown caused by an increase in insulation leakage current due to the electric field and humidity.
