These MOSFETs, housed in compact SOT-1118 (UDFN6) packages, feature excellent heat dissipation and low device drain-on resistance [RDS(ON) = 25 mΩ (typ.) @ N-ch, VGS = 4.5 V]. These characteristics make them suitable for use as power management switches and DC-DC converters in various mobile devices, such as smartphones and tablets. The SSM6L61NU and SSM6N61NU can also be used in battery management applications and for load switching in applications with USB Type-C interfaces.
With an industry-leading N-CH ON resistance of 25 mΩ[1], the new MOSFETs contribute to reduced power loss in power supplies and extend the operating time of battery-powered devices. The SSM6L61NU is a complementary device, and the SSM6N61NU is a dual N-ch device. When used in USB Type-C applications, the SSM6L61NU and SSM6N61NU can be placed between the Vout (output voltage) of the power management IC and the SoC, or elsewhere in the circuit.
A single-package design, measuring only 2 mm x 2 mm, improves the power dissipation ratio (PD = 1 W) and reduces the MOSFET footprint by 50% compared to those housed in a PS-8 package.
[1] Compared to an N-ch of a UDFN6 encapsulated product, according to a survey conducted by Toshiba (as of November 2015).
