With the ubiquity of USB interfaces, many components and devices compatible with USB standards have been developed. The USB Power Delivery (USB PD) standard supports higher power levels, from 15 W (5 V/3 A) up to a maximum of 240 W (48 V/5 A), and allows switching between the supply and receive sides. This requires USB-charged devices to support bidirectional power, and this is the use case for which the new SSM10N961L N-channel common-drain MOSFET was designed. Until now, Toshiba's N-channel common-drain MOSFETs have been 12 V products primarily intended for protecting lithium-ion (Li-ion) battery packs in smartphones. The new 30 V product can be used for applications requiring voltages higher than 12 V, such as load switching for power lines of USB charging devices and protecting lithium-ion battery packs for battery-powered appliances. The SSM10N961L combines two N-channels in a common-drain configuration, enabling bidirectional operation. Its source-to-source breakdown voltage (V(BR)SSS) is 30 V, making it suitable for higher-voltage applications such as laptops and tablets. To minimize losses in all applications, the source-to-source on-resistance (RSS(ON)) is typically 9.9 mΩ. When mounted on an 18 µm, 407 mm² copper pad, the device's rated current is 9.0 A. Increasing the pad size and thickness to 70 µm and 687.5 mm² raises the rated current to 14.0 A. Despite the SSM10N961L's power control capabilities, the device is housed in a small, thin package (TCSPAG-341501) measuring only 3.37 mm × 1.47 mm × 0.11 mm, enabling the development of high-density solutions. Combining the new device with a TCK42xG driver IC allows for the creation of a load switching circuit with backflow prevention or a power multiplexer circuit capable of switching between manufacturing operations. Before-break (MBB - Make Before Brake) and before-make (BBM - Brake Before Make) break-before - make ...

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