At only three-quarters the width and length, it reduces space consumption compared to the previous TO-3P (L) package. This provides product designers with greater flexibility while maintaining a 150W power package (Pc).
The 2SA1943N transistor has a maximum collector-emitter voltage ratio (VCEO) of -230V and a continuous collector current ratio (IC) of -15A, while the 2SC5200N has a maximum VCEO of 230V and an IC of 15A.
The 2SA1943N transistor offers minimal DC current gain, hFE(1) of 80 (VCE = -5V and IC = -1A) and hFE(2) of 35 (VCE = -5V and IC = -7A), while the 2SC5200N offers hFE(1) of 80 (VCE = 5V and IC = 1A) and hFE(2) of 35 (VCE = 5V and IC = 7A). Another advantage is the high linearity of both hFE and VBE. Both devices achieve a typical transition frequency (ft) of 30 MHz.
The new devices are housed in a new TO-3P (N) package measuring only 15.9 mm by 40.5 mm by 4.8 mm.
