The new devices offer low driving resistance (RDS(on)) for heavy load applications, including power steering (EPS), braking systems and other high loads in vehicles equipped with internal combustion engines (ICE) and micro hybrids.
The family of 22 new 40V N-channel MOSFETs, AEC-Q101 approved, incorporates Gen12.7 trench technology, offering ultra-low RDS(on) in D2Pak-7P, D2Pak, DPak, TO-262, IPAK, and TO-220 packages. The AUIRFS8409-7P model, in a D2Pak-7P package, boasts a maximum RDS(on) of just 0.75 mΩ at 10 Vgs, with a current rating of up to 240 A. These new devices offer low conduction losses and excellent avalanche performance, delivering increased efficiency, power density, and reliability. With these characteristics, many applications using these new COOLiRFET™ devices operate at lower temperatures than with more advanced MOSFETs.
IR aims to promote quality in the automotive industry with the goal of achieving zero defects. This is accomplished through dynamic and static testing as part of Part Average Testing, as well as automated wafer-level visual inspection of 100% of components. The new devices are certified to AEC-Q101, which requires no more than a 20% variation in RDS(on) after 1,000 temperature cycles in testing. Furthermore, they are environmentally friendly and feature a lead-free materials list, compliant with RoHS regulations.
