This is especially true for devices used in traction inverters, battery management systems, and electric vehicle (EV) junction boxes with integrated starter generators (ISGs).
The new 80V XPQR8308QB and 100V XPQ1R00AQB are based on Toshiba's new U-MOS XH process. This provides low resistance levels (RDS(ON) since the XPQR8308QB measures less than 0.83 mΩ, while the XPQ1R00AQB does not exceed 1.03 mΩ. The devices are rated for continuous ID values ​​of 350 A (XPQR8308QB) and 300 A (XPQ1R00AQB) with pulsed ID values ​​(IDP) of 1050 A and 900 A, respectively.
The MOSFET chip is thermally and electrically connected to the package leads using clips. This reduces package resistance by approximately 70% and channel-to-case thermal impedance (Zth(ch-c)) by 50% compared to the TO-220SM(W) package. Together, the process and the clip reduce losses and heat generation, creating a very thermally efficient solution
. The L-TOGL package utilizes gull-wing terminals that reduce mounting stress and improve the reliability of soldered joints. This helps ensure ECU reliability in automotive applications with harsh temperature conditions. Both devices are AEC-Q101 certified for automotive applications.
MOSFETs are often connected in parallel to increase current capacity, especially in automotive applications. For efficient operation, the MOSFET specifications must closely match, so Toshiba offers shipments of grouped devices with a 0.4V margin based on their gate threshold voltage.
Toshiba now offers four MOSFETs housed in the innovative L-TOGL package, including the two existing Toshiba 40V products, XPQ1R004PB and XPQR3004PB, along with the products announced today. Toshiba offers products suitable for automotive applications that increasingly demand high currents, high power density, and excellent performance levels. of robustness.