The SCALE-2 IGBT gate drivers are suitable for controlling power MOSFETs and devices based on new materials such as silicon carbide (SiC) operating at switching frequencies up to 500 kHz.
Power Integrations' SCALE-2 IGBT gate drivers are each based on an advanced ASIC chipset that integrates the full functionality of a dual-channel gate driver core into a primary LDI (Logic-to-Driver) chip interface and a secondary IGD (Intelligent Gate Driver) chip. The highly integrated level of the ASIC chipset allows for a dramatic reduction in the number of discrete components, resulting in cost and reliability advantages for designers. The modules are available with blocking voltage capabilities from 600V to 6500V and from 1W to 20W per channel. To ensure optimal performance for direct driving of external N-type DMOS elements, the pre-driver stages of each module incorporate separate gate resistors for independent control of the on/off functionality.
Each module offers designers product flexibility and functionality through optimal dynamic switching performance and accuracy, delivering high reliability and analog performance, while also providing a reduced digital feature size that optimizes cost and performance. The modules offer all the common control functions required to operate a wide range of industrial, motor control, power transmission, traction, solar, wind, and automotive applications.
