The 1700V rating represents a significant advancement in the state-of-the-art GaN power devices, previously established by Power Integrations' 900V and 1250V devices, both released in 2023. The 1700V InnoMux-2 IC readily supports a nominal input voltage of 1000VDC in a flyback configuration and achieves efficiency exceeding 90 percent in applications requiring one, two, or three supply voltages. Each output is regulated with an accuracy of one percent, eliminating post-regulators and further improving system efficiency by approximately ten percent. The new device replaces costly silicon carbide (SiC) transistors in power applications such as car chargers, solar inverters, three-phase meters, and a wide variety of industrial power systems.
Radu Barsan, Vice President of Technology at Power Integrations, stated: “Our rapid pace of GaN development has resulted in three world-first voltage values in less than two years: 900 V, 1250 V, and now 1700 V. Our new InnoMux-2 integrated circuits combine 1700 V GaN with three other recent innovations: independent, precise, multi-output regulation; FluxLink™, our digital isolation communications technology for secondary-side regulation (SSR); and active-clamp-free zero-voltage switching (ZVS), which virtually eliminates switching losses.”
“The 1700 V power rating is substantially higher than any other commercially available GaN HEMT that we know of,” says Ezgi Dogmus, head of compound semiconductor business at Yole Group. “The GaN power device market is poised to reach $2 billion by the end of the decade, expanding across several application areas with potentially attractive cost advantages over SiC.” (1)
Availability and Resources:
The price of the InnoMux-2 1700 V integrated circuits starts at $4.90 per 10,000 units. A reference design, RDR-1053, describing a 60 W dual-output (5 V and 24 V) power supply, can be downloaded for free from the Power Integrations website.
