Over the past few years, the growing trend toward energy conservation across all sectors has increased the demand for energy-efficient power semiconductors, particularly for industrial applications such as general-purpose inverters and manufacturing equipment. Most auxiliary power supplies, which provide drive voltages to power supply circuits, control ICs, and various complementary systems, employ silicon MOSFETs with a high breakdown voltage (over 1000V). However, these high-voltage MOSFETs experience significant conduction losses (often generating excessive heat) and present challenges related to surface area requirements and the number of external components, hindering system downsizing. In response, ROHM has developed low-loss SiC MOSFETs and control ICs that maximize performance and contribute to miniaturizing the final product.
The SCT2H12NZ offers the high breakdown voltage required by auxiliary power supplies in industrial equipment. Conduction losses are reduced by a factor of 8 compared to conventional silicon MOSFETs, thus increasing energy efficiency. Furthermore, when combined with ROHM's specially designed AC/DC converter control IC for driving SiC MOSFETs (BD7682FJ-LB), performance can be maximized and efficiency improved by up to 6%. This allows for the use of smaller peripheral components, further enhancing miniaturization.
Key Features
1. Optimized for Auxiliary Power Supplies in Industrial Equipment
Compared to 1500V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides a higher breakdown voltage (1700V) with an 8x lower on-resistance (1.15Ω). Furthermore, its compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. ROHM also offers a surface-mount version (TO268-2L) that provides the appropriate creepage distance.
2. Improved efficiency when combined with ROHM's dedicated IC.
Using this new SiC MOSFET in conjunction with ROHM's AC/DC converter control IC (BD7682FJ-LB), specifically designed for SiC MOSFET drives, will maximize performance and increase efficiency by up to 6%. Heat generation will also be reduced, minimizing thermal countermeasures and allowing for the use of smaller components.
3. Easy Evaluation with ROHM's Evaluation Board for SiC Devices.
As a comprehensive semiconductor manufacturer, ROHM offers a wide range of ICs optimized for various SiC devices. ROHM also releases evaluation boards and kits that enable immediate evaluation and development. In addition to the BD7682FJ-LB-EVK-402, a gate drive board is available for evaluating the complete ROHM SiC module, as well as a damper module. Further information is available on ROHM's dedicated support page.
Applications
Auxiliary power supplies for high voltage (400VAC) industrial equipment such as industrial automation (robots), solar and industrial inverters and manufacturing/testing devices.
