Mouser Electronics' UF4C/SC SiC FETs offer designers a variety of on-resistance and package options. These 1200V SiC FETs are available in on-resistance (RDS(on)) versions ranging from 23 to 70 mΩ, and in either a three-terminal TO-247-3L or a four-terminal TO-247-4L package. The TO-247-4L package incorporates a Kelvin gate to provide ultra-low gate charging and exceptional reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring standard gate drive.
All devices in the UF4C/SC family can be safely driven with a standard gate drive voltage of 0 to 12 or 15 V, making them suitable for replacing IGBTs, FETs, or silicon superjunction devices without altering the gate drive voltage. Other notable features of the UF4C/SC SiC FETs include exceptional threshold noise margin, maintained with a true threshold voltage of 5 V, excellent reverse recovery, and a built-in ESD gate protection clamp.
