ROHM Semiconductor has announced its third-generation 650V IGBT family technology. Thanks to its advanced design and beneficial characteristics, it is an ideal solution for smooth and highly efficient switching in industrial and household appliance applications.Power semiconductors, including IGBTs, are gaining acceptance due to their implementation in many types of high-voltage applications. These components are expected to achieve high efficiency and reliability while maintaining low loss levels. Expanding its existing range of high-current IGBTs and IGBTs with lower saturation voltage and faster switching, ROHM now introduces its 3rd generation of high-efficiency IGBTs. The new devices utilize a thinner wafer structure, as well as field attenuation technologies and a proprietary trench-gate structure, to deliver advanced performance and meet the growing demand for high-frequency switching.
ROHM's new 3rd generation 650V IGBTs, based on an advanced field attenuation structure, offer a lower carrier concentration gradient in the drift region, improving carrier distribution. This allows for a reduction in saturation voltage and an increase in switching speed, achieving an excellent compromise between saturation voltage and cutoff losses, unlike conventional solutions.
ROHM has also implemented a sophisticated trench gate structure that reduces gate loading and capacitance. Optimized doping and cell structure, along with a wafer 15% thinner than the 2nd generation, significantly decrease overall device losses. A lower carrier concentration during the conduction phase results in reduced cutoff losses. Furthermore, the new devices offer smooth switching, even with low external gate resistance. Measurement results indicate low noise levels, even at increased switching speeds. Miniaturization and improved characteristics reduce saturation voltage by 6% and cutoff switching losses by 20% compared to the 2nd generation, thus improving overall system performance.
The 3rd generation 650V IGBT range, comprising 30/50/80A models in the RGTV series and 30/40/50A models in the RGW series, is available in two different packages (TO-247N and TO-3PFM) and in two optimized series. The RGTV series is designed for applications requiring advanced short-circuit protection, while the RGW series is specifically suited for converters, offering low gate load and capacitance, as well as extremely low switching losses. Both series also incorporate a very fast, smooth recovery diode for optimal efficiency.
