ROHM Semiconductor announces a new series of isolated gate driver ICs for power MOSFETs. The first model in this series is the BM61S40RFV, a gate driver that meets AEC-Q100 specifications, offers 3.75kV isolation, and has been specifically designed for ROHM's SiC power MOSFETs.This device provides an optimized solution for robust power supply circuit designs in industrial and automotive applications.
The power device plays a crucial role in the design of power electronics in industrial and automotive power systems. To meet the specific requirements of these applications, enhance design flexibility and reliability, and enable faster time to market, ROHM utilizes proprietary microfabrication processes for developing an integrated coreless transformer to produce compact, robust, and reliable isolated gate drivers optimized for SiC technology.
The new device has a 4A output current, a built-in active Miller lockout function to prevent parasitic effects during activation, and integrated under-voltage lockout (UVLO) protection—a crucial safety feature to prevent potential damage to the power circuit breaker due to thermal overload. Integrating this function into the door controller optimizes the number of external components and ensures compliance with the specific protection requirements of industrial and automotive applications (e.g., ASIL B/C/D for automotive or SIL2/3/4 for industrial applications).
Designers can optimize the number of external components and the space occupied on the printed circuit board, thus reducing design effort. Furthermore, the integrated functionality improves the performance of the driver stage and system reliability with better EMI levels and reduced coupling effects. Pin compatibility with the BM60015FV-LB and BM60016FV-C provides design flexibility and enables sustainable, future-proof solutions.
To complete the gate driver stage design, the BD7F100HFN is a perfect IC for implementing a compact, proven flyback DC/DC converter to power the isolated driver section. ROHM offers a small, tested evaluation board that combines a BD7F100HFN and the new BM61S40RFV gate driver IC.
Specifications
Insulation voltage: 3750Vrms
VCC1 voltage: 4.5~5.5V
VCC2 voltage: 16~24V
UVLO2 voltage: 14.5V (Typ)
Operating temperature: -40~125°C
I/O delay time (max.): 60ns
Delay adjustment: 20ns
Output current: 4A
Package: SSOP-B10W (3.50mm x 10.20mm x 1.9mm)
