Based on the proprietary Bidirectional Bipolar Junction Transistor (B-TRAN®) architecture, the new component offers native bidirectional switching capabilities and an extremely low conduction voltage drop, enabling the development of more compact and efficient systems compared to conventional solutions based on MOSFETs or IGBTs.
Reduced losses and increased efficiency.
One of the most outstanding features of the new device is its ultra-low conduction saturation voltage, with typical values of just 0.56 V at 70 A and 25 °C, a particularly relevant characteristic in applications where current flows for extended periods.
This reduced voltage drop translates directly into lower thermal losses and a substantial improvement in overall system efficiency. In applications involving battery disconnection, electronic contactors, or solid-state switches, where the conduction time is often much longer than the switching time, the energy savings can be significant.
Integrated Bidirectional Switching:
Unlike other power technologies that require multiple devices to block and conduct current in both directions, the B-TRAN® inherently incorporates this functionality. This allows for a reduction in the number of components, simplifies the power topology, and decreases both the size and cost of certain electronic systems.
The blocking capacity reaches 1200 V, while the nominal current is 75 A, with the ability to withstand pulses of up to 300 A, thus expanding its use to demanding industrial applications.
Optimized design for high power density.
The device is supplied in an insulated TO-264 package with dual-sided cooling, a configuration designed to maximize heat dissipation and facilitate high-power-density designs. The junction-to-case thermal resistance is between 0.10 and 0.12 K/W, contributing to more efficient thermal management.
Furthermore, the B-TRAN® features a positive temperature coefficient, a characteristic that simplifies the parallel connection of multiple devices and promotes uniform current distribution among them.
Target Applications
: Ideal Power positions this new generation of B-TRAN® for applications where efficiency and reliability are paramount, including:
DC Solid-State Circuit Breakers. AC Static Circuit Breakers. Battery Disconnect Systems. DC Electronic Contactors
.
Automatic
Transfer
Switches.
These applications are gaining particular relevance in sectors such as energy storage, renewable energy infrastructure, data centers, microgrids, electric mobility, and industrial power distribution systems.
Towards a New Generation of Solid-State Circuit Breakers:
The introduction of the IPAD01208A04 model represents a further step in Ideal Power's strategy to drive the adoption of B-TRAN® technology in markets where energy efficiency and loss reduction are critical.
With an operating frequency of up to 10 kHz, low parasitic inductance and capacitance, and an architecture specifically optimized for high-efficiency static switching, the new device presents itself as an innovative alternative for the development of the next generation of power protection and control systems.
Summary technical data sheet
Technology: B-TRAN® (Bidirectional Bipolar Junction Transistor)
Blocking voltage: 1200 V
Rated current: 75 A
Peak current: 300 A
Maximum junction temperature: 150 °C
Package: TO-264 insulated
Cooling: double-sided
Switching frequency: up to 10 kHz
Applications: static switches, DC contactors, battery disconnection and automatic transfer systems.
