With this, the power semiconductor specialist is responding to the growing demands of electric mobility and modern industrial applications.
Among StarPower's latest developments is a new family of transfer-molded half-bridge modules designed for traction inverters in power classes starting at 250 kW. These modules are available in both silicon and silicon carbide technologies and utilize the latest Gen3 generation of trench IGBTs, as well as second-generation SiC MOSFETs with extremely low conduction losses, achieving up to 1.3 mΩ RDS(on) at the module level.
High-quality Si₃N₄ AMB substrates, combined with an optimized pin-fin base design, ensure significantly improved heat dissipation. The range includes 750V and 1200V variants, with Gen3 IGBT modules of 750 Arms and 900 Arms, as well as 450 Arms and 500 Arms. SiC versions are available with RDS(on) values of 1.4 mΩ and 1.0 mΩ, as well as 1.8 mΩ and 1.3 mΩ.
In addition, StarPower is expanding its portfolio of encapsulated three-phase bridge modules for traction inverters in the low- and medium-power range. These modules also incorporate Gen3 trench IGBT technology and second-generation SiC MOSFETs, offering particularly low losses starting at 2 mΩ RDS(on).
The combination of Si₃N₄ AMB substrates and a pin-fin base ensures high thermal robustness; an integrated current sensor is also available as an option. The modules are available in 750 V and 1200 V versions, including Gen3 IGBT variants of 350 Arms, 380 Arms, and 300 Arms. The SiC versions offer RDS(on) values of 2.3 mΩ and 2.0 mΩ, as well as 3.0 mΩ and 2.0 mΩ.
With these new modules, StarPower reinforces its technological advancement and consolidates its position as a high-performance partner for the electrification of modern drive systems.
Visit StarPower at PCIM (Hall 9, Stand 442) in Nuremberg, Germany
