The IRF6708S2 Small Can and IRF6728M Medium Can devices allow for a 30% reduction in the number of components, significantly lowering the overall system cost. These new DirectFET MOSFETs are characterized by their low load and on-resistance (RDS(on)) values (1.8 mW at 10 V and 2.8 mW at 4.5 V for the IRF6728M, and 7.5 mW at 10 V and 12.0 mW at 4.5 V for the IRF6708S2) to minimize conduction and switching losses. The IRF6728M also incorporates a monolithically integrated Schottky diode, which reduces losses associated with structural diode conduction and reverse recovery. By offering a highly efficient and economical solution for cost-sensitive DC/DC switching applications with the assurance of DirectFET's superior thermal characteristics, the IRF6708S2 and IRF6728M circuit set delivers excellent overall value.
The RoHS-compliant IRF6708S2 and IRF6728M incorporate the latest generation of silicon IR for 30V MOSFETs. In addition to their low RDS(on) and load values, the new devices take advantage of the low parasitic resistance inductance and superior cooling capabilities of the DirectFET package.
