The GS-065-060 transistors are 650V enhancement-mode power transistors with simple gate drive requirements ranging from 0V to 6V. These transistors feature a high switching frequency of over 10 MHz, with fast and controllable rise and fall times. They are housed in a low-inductance, low-thermal-resistance GaNPX® package. The transistors also offer reverse conduction capabilities and zero reverse recovery loss, providing efficient performance for demanding high-power applications. The GS-065-060 transistors feature two gate pads for optimized board design and are RoHS 3 compliant.

More information: https://www.mouser.es/new/gan-systems/gan-systems-650v-transistors/