The SCT3xxx xR series uses a 4-pin package (TO-247-4L) that maximizes switching performance, reducing switching losses by up to 35% compared to conventional 3-pin packages (TO-247N). This contributes to lower power consumption in a wide range of applications.
In recent years, the ever-increasing need for cloud services due to the proliferation of AI and IoT has driven a surge in demand for data centers worldwide. However, for servers used in these data centers, one of the main challenges is how to reduce power consumption while simultaneously increasing capacity and performance. At the same time, SiC devices are gaining traction due to their lower losses compared to conventional silicon devices in server power conversion circuitry. Furthermore, because the TO-247-4L package reduces switching losses compared to conventional packages, it is expected to be widely adopted in high-performance applications such as servers, base stations, and solar power generation systems.
In 2015, ROHM became the first supplier to successfully mass-produce trench-gate SiC MOSFETs and continues to lead the industry in product development. In addition to these new high-efficiency 650V/1200V SiC MOSFETs, we are committed to developing innovative devices and providing solutions that help reduce power consumption in a wide range of devices, including gate driver integrated circuits optimized for SiC units.
ROHM also proposes solutions that facilitate application evaluation, including a SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, equipped with gate driver integrated circuits (BM6101FV-C) along with power supply integrated circuits and discrete components optimized for the SiC device unit.
Key Features:
The 4-pin package (TO-247-4L) reduces switching loss by up to 35%.
With conventional 3-pin packages (TO-247N), the effective gate voltage on the chip is reduced due to the voltage drop across the parasitic inductance of the source terminal. This reduces the switching speed. Adopting the 4-pin TO-247-4L package separates the driver and power supply pins, minimizing the effects of the parasitic inductance component. This allows maximizing the switching speed of the SiC MOSFETs, reducing the total switching loss (turn-on and turn-off) by up to 35% compared to the conventional package.
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SCT3xxx xR series consists of SiC MOSFETs that utilize a trench gate design. Six models are offered, with a breakdown voltage of 650V (3 products) or 1200V (3 products).
(see table)
Applications
UPS systems, solar power inverters, energy storage systems, electric vehicle charging stations, power supply for server farms and base stations, and more.
Evaluation Board
(P02SCT3040KR-EVK-001) is equipped with our gate driver ICs (BM6101FV-C) optimized for controlling SiC devices, along with multiple power supply ICs and additional discrete components that facilitate application evaluation and development. Compatibility with both TO-247-4L and TO-247N packages allows for the evaluation of both packages under the same conditions. The board can be used for dual-pulse testing, as well as for component evaluation in boost circuits, 2-level inverters, and synchronous rectifier buck circuits.
