This product is designed for a range of motor drive applications. For example: 28V to 48V conversion for eBikes, eScooters, and power tools; high-density DC-DC converters; solar optimizers; and synchronous rectification that converts 12V to 20V for chargers, adapters, and TV power supplies.
The typical RDS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than that of 80V silicon MOSFETs. This allows for switching frequencies 10 times higher than those of silicon MOSFETs without a penalty in efficiency, thus producing the highest power density. This makes the EPC2619 ideal for high-frequency hard-switching applications from 24V to 48V, such as those used in buck, buck-boost, and boost converters.
The typical RDS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87 mOhm*nC, twice as good as 80 V silicon MOSFETs. This makes the EPC2619 ideal for soft-switching applications, such as the full-bridge primary rectification for LLC-based DCX DC-DC converters.
Development Board:
The EPC90153 development board is a half-bridge board incorporating the EPC2619 GaN FET. It is designed for a maximum device voltage of 80 V and a maximum output current of 20 A. The purpose of this board is to simplify the evaluation process for power system designers, thereby accelerating their time to market. This 50.8 mm x 50.8 mm (2" x 2") board is designed for optimal switching performance and contains all the critical components necessary for easy evaluation.
Price and availability
The EPC2619 is priced at $1.90 each in 2.5 Ku volumes.
The EPC90153 development board is priced at $200.00 each.
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at: https://epc-co.com/epc/design-support/part-cross-reference-search
