Among the main applications of these high-power-density modules are industrial drives and motor control equipment, power inverters for renewable energy generating plants, and converters/inverters required for electric railway infrastructure.
A key element in achieving the performance parameters of Toshiba's new SiC MOSFET modules is the company's proprietary packaging technology. The iXPLV (intelligent flexible package low voltage) packages used in these modules are based on an advanced silver-sintered internal connection technology that enables high levels of operating efficiency. They support channel temperatures up to 175°C and guarantee insulation up to 6000 VRMS. Switching losses during conduction and cutoff are maintained at 250 mJ and 240 mJ, respectively, while the typical parasitic inductance value is only 12 nH.
